N-channel MOSFET 60V 30A
N-channel MOSFET 60V 30A
Mounting Style: | Through Hole |
Package/Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 60 V |
Id – Continuous Drain Current: | 30 A |
Rds On – Drain-Source Resistance: | 50 mOhms |
Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: | 4 V |
Qg – Gate Charge: | 46 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 175 C |
Pd – Power Dissipation: | 88 W |
Channel Mode: | Enhancement |
Series: | IRFZ |
Fall Time: | 52 ns |
Height: | 15.49 mm |
Length: | 10.41 mm |
Product Type: | MOSFET |
Rise Time: | 100 ns |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 29 ns |
Typical Turn-On Delay Time: | 13 ns |
Width: | 4.7 mm |
Unit Weight: | 2 g |